device geometry meaning in Chinese
器件几何图形
Examples
- The expression can be used in calculation for relationships of the input voltage , output voltage and device geometry parameter
用渐近解的分析方法对所求到的解进行简化，导出了硅横向压阻效应四端压力传感器的输出电压表达式。 - Then the relations among rtto ' s frequency , output power , microwave mode , and parameters of both the device geometry and the electron beam are studied in detail
然后，改变rtto的结构参数和运行参数，国内外首次详细研究了输出微波功率、频率、模式及器件工作状态与rtto几何参数和电子束参数之间的关系，揭示了rtto的内在规律。